Room temperature photoreflectance of MOCVD-grown InAs GaAs quantum dots

Authors
Sek, G Misiewicz, J Ryczko, K Kubisa, M Heinrichsdorff, F Stier, O Bimberg, D
Citation
G. Sek et al., Room temperature photoreflectance of MOCVD-grown InAs GaAs quantum dots, SOL ST COMM, 110(12), 1999, pp. 657-660
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
110
Issue
12
Year of publication
1999
Pages
657 - 660
Database
ISI
SICI code
0038-1098(1999)110:12<657:RTPOMI>2.0.ZU;2-H
Abstract
Photoreflectance spectroscopy results are reported for InAs/GaAs self-organ ised quantum dots grown by low-pressure MOCVD. Quantum dot-related optical transitions have been observed for the first time at room temperature. Good agreement between experiment and theory based on a recent 8-band k-p theor y has been obtained. (C) 1999 Elsevier Science Ltd. All rights reserved.