Mg. Betti et al., Density of states of a two-dimensional electron gas measured by high-resolution photoelectron spectroscopy, SOL ST COMM, 110(12), 1999, pp. 661-666
We present high energy-resolution photoemission measurements of the spectra
l density at the discrete quantized electronic levels of a two-dimensional
(2D) electron gas. The dynamical 2D electron gas has been obtained by gener
ating a strong accumulation layer at the (110) surface of narrow-gap III-V
semiconductors. Exploitation of a number of cases generating band bending (
metallic chains or clusters, atomic structure, defects) demonstrates the ge
nerality of 2D electron gas formation at charge-accumulated semiconductor s
urfaces. A self-consistent solution of the Poisson and Schrodinger equation
s gives the potential well shape, the sub-band energy level position and th
e accumulated charge density, in excellent agreement with the present exper
imental data. (C) 1999 Published by Elsevier Science Ltd. All rights reserv
ed.