Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing

The results of experimental investigations of gallium arsenide single cryst als with the orientations (100), (311)A, (211)A, (111)A, and (221)A are pre sented. The crystals were doped with silicon ions on the Iolla-3M setup (io n energy 75 keV, ion beam density 1 mu A/cm(2), implantation dose 1.2x10(3) cm(-2)) at room temperature and annealed on the Impul's-5 setup at 950 deg rees C. Raman scattering and low-temperature photoluminescence methods esta blished that the highest electrical activity of the implanted silicon under identical implantation and annealing conditions obtains for (100) and (311 ) A gallium arsenide. In the process n-type layers are produced. (C) 1999 A merican Institute of Physics. [S1063-7842(99)01305-7].