Skin effect during propagation of high-power short-wavelength microwaves in a partially ionized semiconductor plasma

Citation
Oa. Kosygin et al., Skin effect during propagation of high-power short-wavelength microwaves in a partially ionized semiconductor plasma, TECH PHYS, 44(5), 1999, pp. 602-603
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
44
Issue
5
Year of publication
1999
Pages
602 - 603
Database
ISI
SICI code
1063-7842(199905)44:5<602:SEDPOH>2.0.ZU;2-Z
Abstract
A study is made of the propagation of high-power electromagnetic waves in s patially inhomogeneous plasmas of thin semiconducting elements and films. T he effect of surface recombination and an external magnetic field on the de pth of penetration of an ionizing field into the semiconductor plasma is ex amined. (c) 1999 American Institute of Physics. [S1063-7842(99)02605-7].