This paper presents a new more advantageous configuration for the laser dio
de that is used as the principle light source in optical fiber communicatio
ns and a range of other applications. Most of the common drawbacks have bee
n eradicated through the new design which is integrated through the well kn
own floating gate MOSFET technology. Advantages including improved thermal
and optical stabilization and easy direct modulation are realized from a ne
w on-chip laser driver. Besides, the technique guarantees compensation for
device leakage and device to device tolerances. The resulting device is che
aper and easy to construct.
The voltage control provides better output power modulation and improve lin
earity for high output power levels. The threshold current required to stim
ulate emission is also reduced to similar to 10(3) A/cm(2) at 300 K with an
active region thickness of similar to 0.5 mu m. In fact the proposed desig
n provides a thinner well defined active region (0.3 mu m) which also acts
as an optical cavity resonator, besides satisfying the conditions for the c
onfinement of charged carriers and optical fields.