Structural and photoluminescence characterization of GaN film grown on Si (111) substrate

GaN epilayer grown on Si (111) substrate by a novel vacuum reaction method rather than metal organic chemical vapor deposition or molecule beam epitax y is reported. Scanning electron micrograph shows that surface of GaN film is flat and crack-free. A pronounced GaN (0002) peak appears in the x-ray d iffraction pattern. The full width at half-maximum (FWHM) of the double-cry stal x-ray rocking curve for (0002) diffraction from the GaN epilayer is 30 arcmin. The photoluminescence spectrum shows that the GaN epilayer emits l ight at the wavelength of 365 nm with an FWHM of 8 nm (74.6 meV).