Preparation and properties of Er and Yb doped InP-based semiconductor compounds

In this paper we pursue the effect of the erbium and ytterium addition duri ng the liquid phase epitaxial (LPE) growth on physical properties of thin I nP layers. Series of InP layer samples were prepared by LPE from the melts containing 0-0.3wt.% of Er and Yb. The grown layers were examined by the Ba ll effect and C-V measurements, photoluminescence spectroscopy and Rutherfo rd backscattering spectrometry (RBS). We have found that only Yb impurity w as incorporated into the lattice of InP layer. With increasing Yb content i n the growth melt the layer's conductivity smoothly changed from n to p typ e when Yb admixture exceeded certain limit. On the basis of these results w e prepared p-n junctions in the InP layers directly doped by Yb, and tested then by C-V measurements.