Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes

Authors
Bludska, J Jakubec, I Nohavica, D Pekarek, L
Citation
J. Bludska et al., Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes, CZEC J PHYS, 49(5), 1999, pp. 775-781
Citations number
10
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
49
Issue
5
Year of publication
1999
Pages
775 - 781
Database
ISI
SICI code
0011-4626(199905)49:5<775:HPOIPA>2.0.ZU;2-1
Abstract
We report on preparation of p-In1-xGaxP polycrystalline, p-In0.5Ga0.5P/p-Ga As, and p-In0.5Ga0.5P/n-GaAs/n-InP tandem-type cathodes. The photovoltaic e fficiency of InGaP tandem type epitaxial electrodes is two times higher tha n that of polycrystalline photocathodes. The most significant advantage of epitaxial electrodes is in their markedly better corrosion resistance in co mparison with polycrystalline photocatodes.