A diagrammatic method for analysis of GaAs and InP based optoelectronic devices

A modified version of the signal flow graphs method can be applied to revea l the topological structure of physical models describing the operation of optoelectronic devices based on heterostructures comprising A(III)B(V) semi conductor compounds. In particular, this kind of analysis is apt to reveal the presence of closed paths (feedback loops) in the causal make-up of the phenomena underlying function of the devices. The analytical apparatus asso ciated with the diagrams affords a new formulation of criteria for the occu rrence of such physical conditions as the bistability or the threshold beha viour. The approach is illustrated on the instances of injection semiconduc tor laser, nonlinear Fabry-Perot resonator, self-electro-optic effect devic e and semiconductor laser optical amplifier.