Si-based optoelectronic devices and their attractive applications

Citation
Qm. Wang et al., Si-based optoelectronic devices and their attractive applications, CZEC J PHYS, 49(5), 1999, pp. 837-848
Citations number
5
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
49
Issue
5
Year of publication
1999
Pages
837 - 848
Database
ISI
SICI code
0011-4626(199905)49:5<837:SODATA>2.0.ZU;2-X
Abstract
The semiconductor photonics and optoelectronics which have a great signific ance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent res earch carried out in our laboratory in enhanced luminescence from low dimen sional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective a bsorption coefficient in PIN photodetector for 1.3 mu m wavelength and a re sonant cavity enhanced structure, used to improve the quantum efficiency an d response in heterostructure photo-transistor (HPT), are also proposed in this paper.