In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature

Authors
Fukidome, H Matsumura, M Komeda, T Namba, K Nishioka, Y
Citation
H. Fukidome et al., In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature, EL SOLID ST, 2(8), 1999, pp. 393-394
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
8
Year of publication
1999
Pages
393 - 394
Database
ISI
SICI code
1099-0062(199908)2:8<393:ISAFMO>2.0.ZU;2-#
Abstract
Si(111) surfaces were found to be easily flattened on an atomic scale by a treatment with water from which oxygen was removed by addition of a chemica l deoxygenator. By in situ atomic force microscope measurements of the Si(1 11) surface, we succeeded for the first time in observing the flow of the s teps on the atomically flattened Si(111) surface in oxygen-free water. The average step-flow rate was estimated to be 8 nm/min at room temperature. (C ) 1999 The Electrochemical Society. S1099-0062(98)12-022-9. All rights rese rved.