High precision crystallographic alignment of InP(100)

Authors
Vangbo, M Richard, A Karlsson, M Hjort, K
Citation
M. Vangbo et al., High precision crystallographic alignment of InP(100), EL SOLID ST, 2(8), 1999, pp. 407-408
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
2
Issue
8
Year of publication
1999
Pages
407 - 408
Database
ISI
SICI code
1099-0062(199908)2:8<407:HPCAOI>2.0.ZU;2-N
Abstract
The precise crystallographic orientation of InP wafers is revealed using a crystalign pattern that is etched for a short time. A device pattern can th en be aligned to the manifested direction. Alignment of V-grooves for preci se cleaving of side emitting lasers is demonstrated with a precision of 0.0 63 degrees. (C) 1999 The Electrochemical Society. S1099-0062(99)03-053-9. A ll rights reserved.