+55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers

Authors
Kazmierski, C Debray, JP Madani, R Sagnes, I Ougazzaden, A Bouadma, N Etrillard, J Alexandre, F Quillec, M
Citation
C. Kazmierski et al., +55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers, ELECTR LETT, 35(10), 1999, pp. 811-812
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
10
Year of publication
1999
Pages
811 - 812
Database
ISI
SICI code
0013-5194(19990513)35:10<811:+DCPLA>2.0.ZU;2-K
Abstract
Using an InP lattice matched InGaAlAs/InAlAs system, an all-monolithic vert ical laser structure has been grown. Pulsed lasing at 1.56 mu m has been ob tained up to +55 degrees C with 45 mu m diameter proton-implanted diodes. A thermal resistance of similar to 420 K/W has been estimated. The reported characterisations indicate the potential of this system laser for CW operat ion and for simple large-scale processing.