High temperature performance of ion implanted hetero-dimensional JFETs

Authors
Lu, JQ Pala, N Shur, M Hurt, MJ Peatman, WCB
Citation
Jq. Lu et al., High temperature performance of ion implanted hetero-dimensional JFETs, ELECTR LETT, 35(10), 1999, pp. 845-846
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
10
Year of publication
1999
Pages
845 - 846
Database
ISI
SICI code
0013-5194(19990513)35:10<845:HTPOII>2.0.ZU;2-M
Abstract
A report is presented on the high temperature performance of ion implanted GaAs hetero-dimensional JFETs. The temperature coefficient of the threshold voltage is similar to-1mV/K. The device characteristics exhibit a sharp pi nch-off, a small ON current, and a very small output conductance. Hence, th is device should be suitable for ultra-low power operation at elevated temp eratures.