Gain calculations for unipolar semiconductor lasers

Citation
Cyl. Cheung et al., Gain calculations for unipolar semiconductor lasers, IEE P-OPTO, 146(1), 1999, pp. 9-13
Citations number
19
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
146
Issue
1
Year of publication
1999
Pages
9 - 13
Database
ISI
SICI code
1350-2433(199902)146:1<9:GCFUSL>2.0.ZU;2-Q
Abstract
The optical gain spectra of a single triple quantum well (TQW) mid-infrared (MIR) laser element suitable for incorporation in a quantum cascade config uration are investigated. The kinetics of the carrier transport in the TQW structure are provided using a four-level rate equation model. The low gain per element at MIR frequencies illustrates the need for several such eleme nts. Preliminary gain calculations for a near-infrared (NIR) structure are also performed.