Operating characteristics of GaAs-InGaAs self-biased piezoelectric S-SEEDs

A theoretical analysis is presented of the performance of GaAs-InxGa1-xAs s elf-biased piezoelectric symmetric self-electro-optic-effect devices (S-SEE D). Although the operation of these devices has been demonstrated, the limi tations on their performance have not been investigated. Despite the benefi ts associated with this type of S-SEED, the model presented suggests that t heir insertion loss cannot be less than similar to 70%. Further, because of the high quality factor required for the optical cavity, it is believed th at the reproducibility of the contrast ratio will be intolerant to differen ces between the nominal and actual absorption coefficients. The model there fore suggests that these structures are not promising candidates for the lo gical elements required in optical processing.