A novel InGaAs/AlGaAs laser integrated with an intracavity absorber grown o
n a(111)B GaAs substrate is demonstrated, making use of the piezoelectric e
ffect. Transparency in the absorber section at the lasing wavelength can be
achieved by using the blue-shifting characteristic of the absorption edge
with reverse bias. This is shown by comparison of the lasing wavelengths wi
th the absorption spectra of the laser structure under reverse bias. It is
described how this approach could offer an alternative integrated laser-mod
ulators.