Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT

Authors
Liu, WC Chang, WL Lour, WS Cheng, SY Shie, YH Chen, JY Wang, WC Pan, SJ
Citation
Wc. Liu et al., Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT, IEEE ELEC D, 20(6), 1999, pp. 274-276
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
6
Year of publication
1999
Pages
274 - 276
Database
ISI
SICI code
0741-3106(199906)20:6<274:TIOAHV>2.0.ZU;2-N
Abstract
We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors in cluding a high-voltage (40 V) and a low-leakage current (17 nA/mm) are furt her improved by eliminating mesa-sidewall effect. We obtained nearly curren t-independent transconductance in the temperature of 300-450 K. The measure d current gain cutoff frequency f(T) and maximum oscillation frequency f(ma x) for a 1-mu m gate device are 12 and 28.4 GHz, respectively.