Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

Authors
Citation
H. Shin et Nm. Kim, Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection, IEEE ELEC D, 20(6), 1999, pp. 280-282
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
6
Year of publication
1999
Pages
280 - 282
Database
ISI
SICI code
0741-3106(199906)20:6<280:AEOTDO>2.0.ZU;2-N
Abstract
The effect of trench-oxide depth on the alpha-particle-induced charge colle ction is analyzed for the first time, From the simulation results, it was f ound that the depth of trench oxide has a considerable influence on the amo unt of collected charge. The confining of generated charge by the trench ox ide was identified as a cause of this anomalous effect. Therefore, the trad eoff between soft error rate and cell to cell isolation characteristics sho uld be considered in optimizing the depth of trench oxide.