MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

An equivalent circuit approach to MOS capacitance-voltage (C-V) modeling of ultrathin gate oxides (1.3-1.8 nm) is proposed, Capacitance simulation inc luding polysilicon depletion is based on quantum mechanical (QM) correction s implemented in a two-dimensional (2-D) device simulator; tunneling curren t is calculated using a one-dimensional (1-D) Green's function solver, The sharp decrease in capacitance observed for gate oxides below 2.0 nm in both accumulation and inversion is modeled using distributed voltage-controlled RC networks. The imaginary components of small-signal input admittance obt ained from AC network analysis agree well with measured capacitance.