MOSFET simulation with quantum effects and nonlocal mobility model

We present a state-of-the-art two-dimensional (2-D) device simulator suitab le for highly doped n-MOSFET's, Quantization effects in the inversion chann el are accounted for by a self-consistent solution of the Poisson, current- continuity and Schrodinger equations. The electron charge is given by a den sity of electrons in the bounded levels plus a density of classically-distr ibuted carriers, Consequently, different mobility models are used. For the former, we adopted a nonlocal, newly-developed mobility model, thus overcom ing the deficiency of currently-used mobility models in the high-doping lim it. We instead retained a standard local model for the classical regime. Re sults of the simulations are in good agreement with the experiments.