Structural characterisation of remelt liquid phase epitaxy (LPE) grown AlGaAs heteroepitaxial layer

Remelt liquid phase epitaxial (RLPE) layers of AlxGa1-xAs have been grown f rom the undersaturated Al/Ga/GaAs melt. Rocking curves of the RLPE/LPE AlGa As layer have been recorded. The angular separation is found to reduce in R LPE layer as compared to the LPE grown layers. Double crystal X-ray (DCXRT) and Lang topography (LT) have been used to study the dislocations in RLPE grown AlGaAs epitaxial layer and have been compared with similar results ob tained on conventional LPE grown layers. No misfit dislocations have been o bserved in RLPE-AlGaAs layers compared to conventionally grown LPE layers. The results are presented in detail. (C) 1999 Elsevier Science B.V. All rig hts reserved.