Storage mechanism of spin-tunneling junctions

This paper concerns a microstructured spin-tunneling junction in which the minor loop's slope has a dependency on its past magnetic histories. The abo ve storage mechanism inspired the authors to design and fabricate a new typ e of solid state spin-tunneling random access memory. This memory operates on the general principle of storing a binary datum in the 'hard' magnetic c omponent and sensing its remanent state by switching the 'soft' magnetic co mponent in such a way that the magnetic state of the 'hard' component remai ns unaltered. (C) 1999 Elsevier Science B.V. All rights reserved.