Characterization of magnetic tunnel junctions using IETS

Authors
van de Veerdonk, RJM Moodera, JS de Jonge, WJM
Citation
Rjm. Van De Veerdonk et al., Characterization of magnetic tunnel junctions using IETS, J MAGN MAGN, 199, 1999, pp. 152-154
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
199
Year of publication
1999
Pages
152 - 154
Database
ISI
SICI code
0304-8853(199906)199:<152:COMTJU>2.0.ZU;2-W
Abstract
In this paper inelastic electron tunneling spectroscopy measurements are pr esented on tunnel junctions containing both magnetic and nonmagnetic electr odes. Magnon excitations have been found near zero voltage; phonons are obs erved between 30 and 110 mV. Therefore, a model description of the transpor t properties of magnetic tunnel junctions at elevated temperatures or non-z ero bias voltage should include both inelastic contributions. (C) 1999 Else vier Science B.V. All rights reserved.