Effect of magnetic impurities on TMR at finite bias voltage

Authors
Nonoyama, S Itoh, H Oguri, A Inoue, J Bruno, P
Citation
S. Nonoyama et al., Effect of magnetic impurities on TMR at finite bias voltage, J MAGN MAGN, 199, 1999, pp. 158-160
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
199
Year of publication
1999
Pages
158 - 160
Database
ISI
SICI code
0304-8853(199906)199:<158:EOMIOT>2.0.ZU;2-I
Abstract
Transport phenomena through a ferromagnetic tunneling junction in the prese nce of magnetic impurities are investigated at a finite bias voltage. We ha ve found that the feature of the reduction of the tunnel magnetoresistance (TMR) with increasing bias voltage changes by the: impurity effect. (C) 199 9 Elsevier Science B.V. All rights reserved.