Single-electron tunneling in magnetic systems

Citation
A. Brataas et al., Single-electron tunneling in magnetic systems, J MAGN MAGN, 199, 1999, pp. 176-178
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
199
Year of publication
1999
Pages
176 - 178
Database
ISI
SICI code
0304-8853(199906)199:<176:STIMS>2.0.ZU;2-P
Abstract
We discuss the transport properties of small magnetic double barrier struct ures in terms of the orthodox theory of single-electron tunneling for non-v anishing spin-relaxation times. The magnetoresistance of the system is enha nced for slow spin-relaxation in the island due to reduced mixing of the sp in-channels. The spin accumulation can be detected by the long-time transie nt response, which is dominated by the spin dynamics. (C) 1999 Elsevier Sci ence B.V. All rights reserved.