Crystallisation of thin Bi Ge films: role of Bi crystal size

The kinetics of metal-induced-crystallisation of layered films containing a morphous Ge (a-Ge) in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. The a-Ge crystallisa tion temperature depends strongly on NC size and shape, the former influenc ing the nucleation process through the metal surface area in contact with t he semiconductor and the latter controlling the initial Ge crystal growth d irection. (C) 1999 Elsevier Science B.V. All rights reserved.