Radiation-induced amorphization and recrystallization of alpha-SiC single crystal

Single crystals of alpha-SiC were irradiated with 1.0 MeV Ni and 1.3 MeV Au ions at room temperature. The dose dependence of the amorphization and the thermal annealing behavior of the induced damage were studied mainly by us ing Rutherford backscattering spectroscopy with channeling (RBS-C), and par tly by using laser Raman scattering spectroscopy (LRSS) and scanning electr on microscopy (SEM). From the RBS-C measurement, an empirical relationship between the amorphization dose and the atomic number Z was deduced. From th ermal annealing of Ni implanted samples, drastic recrystallization of the a morphized layer and diffusion of implanted Ni atoms toward the Sic surface were observed at 1500 degrees C annealing. (C) 1999 Elsevier Science B.V. A ll rights reserved.