Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

The radiation damage and the radiation-induced segregation (RIS) in type 30 4 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 x 10(17) cm(-2) at RT by using RES and PIXE wi th channeling conditions (RBS-C and PIXE-C), By the RBS-C experiments, it i s found that radiation-induced damage for (1 1 0) orientation increased mor e slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched s lightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation. (C) 1999 Elseiver Science B.V. All rights reserved.