This overview addresses certain aspects of the perfection of the current ge
neration of commercially manufactured monocrystalline silicon, specifically
lattice uniformity and the more complex issues of interstitials, vacancies
, and chemical impurities. The application areas considered are gamma-ray s
pectroscopy, and the x-ray/crystal density approach to determination of the
Avogadro constant. Some current imperfections, for which we show evidence,
appear addressable by technical improvements in the production process, ha
ve a much larger effect than is expected from intrinsic limitations emergin
g from recent model calculations.