Synchrotron x-ray reticulography is a versatile new technique for mapping m
isorientations in single crystals. It is nearly as simple to perform as con
ventional single-crystal Laue topography, yet it yields quantitative data o
n misorientations that would demand long sequences of images if the double-
crystal technique were applied. In reticulography a fine-scale x-ray absorb
ing mesh is placed between a Laue-diffracting crystal specimen and the topo
graph-recording photographic plate. The mesh splits the diffracted beam int
o an array of individually identifiable microbeams. Direction differences b
etween microbeams, which give the orientation differences between the cryst
al elements reflecting them, are measured from their relative shifts within
the array when mesh-to-plate distance is changed. The angular sensitivity
of reticulography depends upon the angular size of the x-ray source. At Sta
tion 7.6 at the SRS, Daresbury, 80 m from the tangent point, and with sourc
e size FWHM (full width half maximum) = 0.23 mm vertically, the incidence a
ngular range in the vertical plane is only 0.6 arcsec, and misorientations
down to this magnitude are measurable. Applications of reticulography to th
ree quite different problems are described, illustrating the method's versa
tility. The problems are: (1) measuring surface lattice-plane tilts due to
an array of dislocations in a large synthetic diamond; (2) determining the
sense of the Burgers vector of a giant screw dislocation in SiC; and (3) me
asuring lattice curvature above an energetic ion implant in a natural diamo
nd.