Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers

Authors
Grim, J Holy, V Kubena, J Stangl, J Darhuber, AA Zerlauth, S Schaffler, F Bauer, G
Citation
J. Grim et al., Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers, J PHYS D, 32(10A), 1999, pp. A216-A219
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
32
Issue
10A
Year of publication
1999
Pages
A216 - A219
Database
ISI
SICI code
0022-3727(19990521)32:10A<A216:DXROSS>2.0.ZU;2-N
Abstract
The morphology of interfaces in strain-compensated Si/SiGe/SiC superlattice s is investigated by means of diffuse x-ray reflection. Various structure m odels are assumed for an analysis of the experimental data, namely anisotro pic ripples, isotropic ripples and a fractal roughness. The type of the str ucture and the mean distance of the ripples is determined on the basis of e xperimental data analysis.