Pressure dependence of T-c for La2-xSrxCuO4 as a function of carrier concentration

Citation
Yb. Yu et al., Pressure dependence of T-c for La2-xSrxCuO4 as a function of carrier concentration, J PHYS-COND, 11(22), 1999, pp. 4401-4407
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
22
Year of publication
1999
Pages
4401 - 4407
Database
ISI
SICI code
0953-8984(19990607)11:22<4401:PDOTFL>2.0.ZU;2-K
Abstract
The pressure effect on T-c for La2-xSrxCuO4 has been investigated within th e van Hove singularity scenario of high-T-c superconductivity by taking int o account the variation of the Fermi energy and the effective attractive in teraction with pressure. It was found that the pressure coefficient of T-c decreases with increasing T-c and remains positive over the whole doping re gion. The predicted T-c increases with increasing pressure, reaching a maxi mum at 4 GPa, and then decreases with further increasing pressure. These re sults are in agreement with experiments.