Observation of defects in a C3N4/diamond/Si structure by infrared light scattering tomography

A structure of C3N4 and diamond multilayers on Si(100) substrate was prepar ed by plasma enhanced chemical vapour deposition and magnetron sputtering t echniques. Morphology observation and chemical composition analysis of the structure were performed by scanning electron microscopy and energy dispers ive x-ray analysis. The multilayers of C3N4 and diamond on Si substrate wer e clearly observed and the composition ratio of nitrogen to carbon was clos e to 1.33. Defects in this structure were, for the first time, investigated by infrared light scattering tomography. Most defects in C3N4 and diamond multilayers were introduced by an extended growth of the original defects i n Si substrate determined through layer-by-layer tomography. The defect typ e is analytically discussed.