Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources

Authors
de Melo, O Sanchez, E Rodriguez, H De Roux, S Rabago-Bernal, F Ruiz-Garcia, J
Citation
O. De Melo et al., Low temperature growth of epitaxial CdSe thin films by an isothermal closed space sublimation technique using two elemental sources, MATER CH PH, 59(2), 1999, pp. 120-124
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
59
Issue
2
Year of publication
1999
Pages
120 - 124
Database
ISI
SICI code
0254-0584(19990525)59:2<120:LTGOEC>2.0.ZU;2-4
Abstract
We present a novel low-cost technique for the epitaxial growth of thin film s. Using a closed space isothermal vapor phase technique, we have grown CdS e thin films on GaAs (100) substrates. The epitaxial growth is performed by exposing the substrate to Cd and Se vapor from elemental sources in a cycl ed manner. The thermodynamic and kinetic aspects of the process are discuss ed, X-ray diffraction patterns confirm the epitaxial growth of CdSe films o n the GaAs substrates. AFM images were obtained re, study the film morpholo gies. (C) 1999 Published by Elsevier Science S.A. All rights reserved.