The structural features of nanocrystalline (NC) Si processed by severe plas
tic deformation are considered. The results of studies by various technique
s (transmission electron microscopy, X-ray diffraction, Raman scattering an
d photoluminescence) are presented. The investigations show that the struct
ure of NC materials is characterized by both a small grain size and a speci
fic defect structure of grain boundaries associated with a high level of el
astic strains and significant microdistortions of the crystal lattice. The
Raman spectrum reveals a peak shift of 2.5 cm(-1) to lower frequencies, a p
eak broadening up to 14.2 cm(-1), an asymmetry of the peaks and an addition
al peak at frequencies from 480 to 500 cm(-1). A visible photoluminescence
with a peak maximum at a wavelength of about 650 nm is observed. (C) 1999 E
lsevier Science S.A. All rights reserved.