A new method for evaluation of transport properties in CdTe and CZT detectors

The precise evaluation of transport properties of both electrons and holes in compound semiconductor detectors, like CdTe or CZT, is of great interest for the development of these devices. Although the electron behaviour can be measured in most cases, that of holes is much more difficult. Both alpha or gamma radiations, as well as conventional computer simulations, have sh own their limits. In this paper, we present a new approach based on compute r simulations, which are performed at various energies. This model will be applied on various kinds of materials. The results will be discussed in ter ms of sensitivity of the method, electronic noise level as well as electric field distribution within the detector. (C) 1999 Published by Elsevier Sci ence B.V. All rights reserved.