High performance p-i-n CdTe and CdZnTe detectors

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is rep orted. The detector stability has been significantly improved, allowing the ir use in precise gamma and XRF applications. Detectors with energy resolut ion close to Si and Ge were produced operating with only -30- - 35 degrees C cooling (by a Peltier cooler of 15 x 15 x 10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm(3) are ava ilable. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm(3). The possibilities of further imp rovement of CdTe and CdZnTe detector characteristics are discussed in this paper. (C) 1999 Elsevier Science B.V. All rights reserved.