Icosahedral order and disorder in semiconductors

Citation
Ve. Dmitrienko et M. Kleman, Icosahedral order and disorder in semiconductors, PHIL MAG L, 79(6), 1999, pp. 359-367
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
79
Issue
6
Year of publication
1999
Pages
359 - 367
Database
ISI
SICI code
0950-0839(199906)79:6<359:IOADIS>2.0.ZU;2-S
Abstract
Hidden icosahedral symmetry of tetrahedral interatomic bonds is found in th e BC8-Ia (3) over bar phase of silicon and germanium (75% of all bonds are directed almost exactly along fivefold icosahedral axes). It is shown that this phase may be considered as a crystalline approximant of a hypothetical icosahedral quasicrystal with a body-centred six-dimensional lattice and t hat all the atomic positions in BC8 crystals may be obtained as projections from that six-dimensional lattice. The diffraction pattern of the BC8 phas e has hierarchical organisation typical of both approximants and quasicryst als. A specific type of topological disorder, related with phason flips, is suggested. The experimentally observed BC8-R8 phase transition can be cons idered as resulting from coherent phason flips of this type. Dual relations hips with approximants of conventional quasicrystals are used to construct a higher order approximant without dangling bonds. A new scenario for cryst alline-to-amorphous transformation is discussed.