Cu, Co and Ni thin films and Co-Ni-Cu/Cu multilayers have been electrodepos
ited directly on n-type silicon substrates. This removes the need of using
a seed-layer deposited by some other methods as a part of the growth proces
s and integrates an efficient, inexpensive and convenient method for fabric
ating thin films with silicon technology. The deposits were prepared under
potentiostatic conditions from different aqueous solutions, containing basi
cally: (i) sulphates of the metallic ions plus sodium sulphate and boric ac
id for thin films and (ii) Ni sulphamate, Co sulphate, Cu sulphate, boric a
cid and sulphamic acid for multilayers. Aspects related to the deposition p
rocess and deposited layers were investigated by cyclic voltammetry, curren
t transients, scanning electron microscopy, Rutherford backscattering and m
agnetoresistance measurements. Typically, thin compact metallic layers with
regular granularity were obtained. Depending on the additives used, differ
ent nucleation and growth mechanisms were observed. Magnetic multilayers wi
th a maximum giant magnetoresistive (GMR) ratio of about 10% were produced.