Photoluminescence in GaAs-based quantum well structures with surface acoustic waves

The interaction between a surface acoustic wave (SAW) and photogenerated ca rriers in GaAs/Al0.3Ga0.7As quantum well (QW) structures is investigated us ing micro-photoluminescence (mu-PL). The excitonic luminescence becomes str ongly suppressed in the presence of a SAW due to the ionization of the exci tons and to the transport of the photogenerated carriers by the piezoelectr ic field. We demonstrate that the degree of mu-PL quenching and the carrier transport efficiency depends not only on the intensity of the piezoelectri c field but also on the carrier mobility in the QW.