Defect structure of yttria-stabilized zirconia and its influence on the ionic conductivity at elevated temperatures

Citation
Jp. Goff et al., Defect structure of yttria-stabilized zirconia and its influence on the ionic conductivity at elevated temperatures, PHYS REV B, 59(22), 1999, pp. 14202-14219
Citations number
66
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
22
Year of publication
1999
Pages
14202 - 14219
Database
ISI
SICI code
0163-1829(19990601)59:22<14202:DSOYZA>2.0.ZU;2-X
Abstract
The defect structure of cubic fluorite structured yttria-stabilized zirconi a (ZrO2)(1-x)(Y2O3)(x) has been investigated over the composition range 0.1 00(3)less than or equal to x less than or equal to 0.241 (10) and temperatu res T(K) up to 2780(10) K, using single-crystal specimens. Analysis of neut ron and x-ray diffraction data, including both Bragg and coherent diffuse s cattering components, has identified three principal types of defects withi n the fluorite lattice. At low yttria concentrations (x<similar to 0.15) th ere are regions of the crystal similar to 20 Angstrom in size which contain relatively few oxygen vacancies, causing the lattice to undergo a slight t etragonal distortion of the type observed in the tetragonal phase of (ZrO2) (1-x)(Y2O3)(x) at x < similar to 0.09. The oxygen vacancies are preferentia lly arranged in pairs on nearest-neighbor anion sites in the (111) fluorite directions, with a cation located between them and extensive relaxations o f the surrounding nearest-neighbor cations and anions. As the yttria conten t increases, these (111) vacancy Fairs pack together in (112) directions to form aggregates, whose short-range defect structure resembles the long-ran ge crystal structure of the ordered compound Zr3Y4O12 and other anion-defic ient fluorite-related systems. The aggregates are typically similar to 15 A ngstrom in diameter, though both their size and number density increase sli ghtly with x. On increasing the temperature, these aggregates remain stable up to close to the melting point. There is also an increasing number of si ngle vacancies and (111) vacancy pairs (with surrounding relaxation fields) as x increases, and these isolated clusters become mobile at T>similar to 1000 K and give rise to the high ionic conductivity of the material. In lig ht of these observations, we propose that the anomalous decrease in the ion ic conductivity with increasing x is a consequence of the decreasing mobili ty of the isolated defects, possibly due to blockage by the increasing numb er of static aggregates. [S0163-1829(99)05621-0].