Oscillating tunneling magnetoresistance in magnetic double-tunnel-junctionstructures

Citation
Zm. Zheng et al., Oscillating tunneling magnetoresistance in magnetic double-tunnel-junctionstructures, PHYS REV B, 59(22), 1999, pp. 14505-14509
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
22
Year of publication
1999
Pages
14505 - 14509
Database
ISI
SICI code
0163-1829(19990601)59:22<14505:OTMIMD>2.0.ZU;2-U
Abstract
Based on an extended Slonczewski model with double delta-type potential bar riers, we study spin-dependent resonant tunneling conductances in a double- tunnel-junction structure, in which two ferromagnetic electrodes are separa ted from a middle nonmagnetic layer of thickness a by two thin insulating l ayers, respectively. It is shown that as the thickness a is increased, the tunneling magnetoresistance, along with the tunneling conductance for paral lel and antiparallel magnetization configurations, exhibits amplitude-varyi ng oscillating behavior with a period of a = pi/k(F) (k(F) being the Fermi wave vector). This abnormal phenomenon is found to stem from the spin-depen dent resonant transmission of electrons passing through the double-tunnel-j unction structure. [S0163-1829(99)00122-8].