Phase transition to the conducting state in a system of charge-transfer excitons at a donor-acceptor interface

Citation
Vm. Agranovich et al., Phase transition to the conducting state in a system of charge-transfer excitons at a donor-acceptor interface, PHYS SOL ST, 41(5), 1999, pp. 704-707
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
5
Year of publication
1999
Pages
704 - 707
Database
ISI
SICI code
1063-7834(199905)41:5<704:PTTTCS>2.0.ZU;2-J
Abstract
We discuss the phase transition to the conducting state in a system of 2D c harge-transfer excitons (CTEs) at a donor-acceptor interface. The phase tra nsition arises due to strong dipole-dipole repulsion between CTEs which sti mulates the population of free carriers in higher energy states even at low temperature. We use the computer simulations with the random distribution of excitons, with finite lifetime explicitly taken into account. The critic al concentration of CTEs and their energy distribution are calculated. We a lso discuss the possibility of observing the predicted phenomena. (C) 1999 American Institute of Physics. [S1063-7834(99)00705-4].