Radiospectroscopy of wide-gap semiconductors: SiC and GaN

Authors
Baranov, PG
Citation
Pg. Baranov, Radiospectroscopy of wide-gap semiconductors: SiC and GaN, PHYS SOL ST, 41(5), 1999, pp. 712-715
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
5
Year of publication
1999
Pages
712 - 715
Database
ISI
SICI code
1063-7834(199905)41:5<712:ROWSSA>2.0.ZU;2-W
Abstract
The present report submitted to the Anniversary Conference of the A. F. Iof fe Physicotechnical Institute, "Physics at the Turn of the 21st Century," d eals with recent EPR studies of main impurities in the wide-gap semiconduct ors SiC and GaN, which appear to be the most promising materials for microe lectronics and quantum semiconductor electronics at the start of the 21st c entury. (C) 1999 American Institute of Physics. [S1063-7834(99)00905-3].