Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon

Authors
Bresler, MS Gusev, OB Sobolev, NA Terukov, EI Yassievich, IN Zakharchenya, BP Gregorkevich, T
Citation
Ms. Bresler et al., Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon, PHYS SOL ST, 41(5), 1999, pp. 770-773
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
5
Year of publication
1999
Pages
770 - 773
Database
ISI
SICI code
1063-7834(199905)41:5<770:MOEATQ>2.0.ZU;2-7
Abstract
A short review is presented of the erbium-ion excitation mechanisms in crys talline and amorphous silicon and of the processes governing thermal quench ing of erbium luminescence in these materials, which draws both from the st udies carried out by the present authors and from available literature data . (C) 1999 American Institute of Physics. [S1063-7834(99)02305-9].