TRANSIENT PASS-TRANSISTOR LEAKAGE CURRENT IN SOI MOSFETS

This paper reports an accurate method of measuring the anomalous leaka ge current in pass-gate MOSFET's unique to SOI devices. A high-speed m easurement setup is used to provide experimental results, and to quant ify the magnitude of leakage. Particularly, great care is taken to mea sure only the device leakage current and not the currents due to paras itic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this leakag e current are experimentally established.