LOW-FIELD AND HIGH-FIELD ELECTRON-TRANSPORT PARAMETERS FOR UNSTRAINEDAND STRAINED SI1-XGEX

Ohmic minority and majority drift mobilities as well as saturation vel ocities are reported for unstrained and strained Si1-xGex alloys up to x = 0.3. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si1-xGex samples for various dopant and Ge concentrations. Saturation velocities are determ ined by full-band Monte Carlo simulations, There is no substantial dec rease in the mobility perpendicular to the Si/SiGe interface for dopin g concentrations above 10(19) cm(-3) and growing x. In contrast, the s aturation-drift velocity is strongly reduced with x.