We present a structural investigation of buried C-induced Ge quantum dot mu
ltilayers grown on (001) Si by molecular-beam epitaxy. Using grazing-incide
nce small angle x-ray scattering, we determine the shape, the mean radius,
height, and dot distance. The dot distribution is isotropic within the (001
) interfaces, and no correlation of the dot positions along growth directio
n was found. (C) 1999 American Institute of Physics. [S0003-6951(99)00825-6
].