Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells

Authors
Romero, MJ Araujo, D Garcia, R Walters, RJ Summers, GP Messenger, SR
Citation
Mj. Romero et al., Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells, APPL PHYS L, 74(25), 1999, pp. 3812-3814
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
25
Year of publication
1999
Pages
3812 - 3814
Database
ISI
SICI code
0003-6951(19990621)74:25<3812:SDORDI>2.0.ZU;2-S
Abstract
The spatial distribution of radiation-induced, radiative recombination cent ers in single-junction p(+)-n InGaP solar cells irradiated by 1 MeV electro ns or 3 MeV protons has been determined from cathodoluminescence (CL) spect ra. The energy levels of the radiation-induced, nonradiative recombination centers were determined from the temperature dependence of the CL intensity . (C) 1999 American Institute of Physics. [S0003-6951(99)05025-1].